We study the effect of gate-induced electric fields on the properties ofsemiconductor-superconductor hybrid nanowires which represent a promisingplatform for realizing topological superconductivity and Majorana zero modes.Using a self-consistent Schr\"odinger-Poisson approach that describes thesemiconductor and the superconductor on equal footing, we are able to accessthe strong tunneling regime and identify the impact of an applied gate voltageon the coupling between semiconductor and superconductor. We discuss howphysical parameters such as the induced superconducting gap and Land\'eg-factor in the semiconductor are modified by redistributing the density ofstates across the interface upon application of an external gate voltage.Finally, we map out the topological phase diagram as a function of magneticfield and gate voltage for InAs/Al nanowires.
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